PART |
Description |
Maker |
V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
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V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp. Mosel Vitelic Corp
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V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
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HYB25D256800BTL-5A HYB25D256800BT HYB25D256800BT-5 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR400 256MBit Double Data Rata SDRAM
|
INFINEON[Infineon Technologies AG]
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HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG Infineon Technologies A...
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HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ?的256Mbit4Mx4)DDR200-2-2)? 256Mbit (64Mx4) DDR333 (2.5-3-3) 256Mbit (16Mx16) DDR200 (2-2-2) 256Mbit (32Mx8) DDR200 (2-2-2) 256Mbit (32Mx8) DDR266A (2-3-3) 256Mbit (64Mx4) DDR266A (2-3-3) 256Mb (64Mx4) FBGA DDR266A (2-3-3) 256-Mbit Double Data Rate SDRAM/ Die Rev. B 256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http:// Infineon Technologies AG Infineon Technologies A...
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V54C3128164VS V54C3128164VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic, Corp
|
K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3) 256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life 256Mbit (64Mx4) DDR266A (2-3-3) ?的256Mbit4Mx4)DDR266A-3-3)?
|
Infineon Technologies AG
|
M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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